A simple model for pattern recognition is proposed, which can be approximated by a multilayer network. An application to handwritten character recognition is simulated and characters were recognized with an accuracy about 90%. Using this model enables the system to be simpler.

An effective bitline technique for high density DRAMs is studies. The open-type bitline structure where the bitlines are activated alternately can decrease the bitline noises and the current dissipation in memory cell arrays. In spite of several disadvantages inherent to the open-type bitline structure, this technique is found to get the larger read-out signal than the conventional bitline configurations for the DRAMs of 64 Mb and beyond. The effectiveness is confirmed with the measurement of the test-chips. This technique is expected to be more efficient for DRAMs of higher density, where the contribution of the inter-bitline capacitance is increased.

This report describes 4-2 compressors composed of Complementary Pass-Transistor Logic (CPL). We will show that circuit designs of the 4-2 compressors can be optimized for high speed and small size using only exclusive-OR's and multiplexers. According to a circuit simulation with 0.8µm CMOS device parameters, the maximum propagation delay and the average power consumption per unit adder are 1.32 ns and 11.6 pJ, respectively.