The three-bit balanced ternary quantum voltage generator was designed and tested. This voltage generator is based on zero-crossing Shapiro steps (ZCSSs) in asymmetric two-junction SQUID. ZCSSs were observed on the current-voltage curves, and maximum and minimum current of ZCSSs were almost same, respectively for the three bits. 27-step quantum voltages from -13Φ0f to +13 Φ0f were observed by combinations of inputs of bit1, bit2 and bit3.

Analysis of the operation modes of an RF-Field-Driven DC-SQUID (RFDS) is presented. We numerically calculate the current-voltage characteristics (IVC) of the RFDS, where the RF signal is coupled to the SQUID loop magnetically. Under no DC offset flux, the IVC exhibit the enhancement of the even-order steps. We first evaluate the dependence of the maximum 2nd step height of the RFDS upon frequency. Contrary to the results for a single junction, the RFDS maintains its step height at a certain value in the low frequency region. The maintained values of the maximum step height are dependent on βL. The smaller βL is, the larger the maximum step height becomes. Next, we evaluate the dependence of the current positions of the 2nd step upon the amplitude of the RF signal. Under the low frequency condition, the current positions agree with the interference patterns of the SQUID, which means that the operation of the RFDS is based on the quantum transitions in the SQUID loop. Under the high frequency condition, on the other hand, the current positions agree with the results for the single junction, which means that the quantum transitions does not follow the RF signal and that the RFDS behaves like a single junction.

A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.