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[Keyword] Si-rich oxide (SiOx)(1hit)

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  • Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors

    Yusuke KATO  Akio OHTA  Mitsuhisa IKEDA  Katsunori MAKIHARA  Seiichi MIYAZAKI  

     
    PAPER

      Vol:
    E100-C No:5
      Page(s):
    468-474

    We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.