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Takafumi KAI Yusuke KATOU Jiro HIROKAWA Makoto ANDO Hiroshi NAKANO Yasutake HIRACHI
Interfaces between a coaxial structure and a post-wall waveguide are proposed as the essential components for cost-effective millimeter-wave modules. PTFE substrate is selected in terms of loss and manufacturability. The reflection and the transmission characteristics are investigated. The short-stepped and the short-taper-stepped feeding structures provide 14.7% and 13.2% bandwidths for the reflection smaller than -15 dB, respectively. The 4640 mm2 size antenna fed by the short-stepped structure in PTFE substrate gives 27.3 dBi with 58.2% efficiency at 60.0 GHz. Feeding structures in PTFE substrate fulfill electrical and manufacturing demands in millimeter-wave bands.
Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI
We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.