Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Summary :
We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.468-474
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.468
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Yusuke KATO
Nagoya University
Akio OHTA
Nagoya University
Mitsuhisa IKEDA
Nagoya University
Katsunori MAKIHARA
Nagoya University
Seiichi MIYAZAKI
Nagoya University
Keyword
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Yusuke KATO, Akio OHTA, Mitsuhisa IKEDA, Katsunori MAKIHARA, Seiichi MIYAZAKI, "Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 468-474, May 2017, doi: 10.1587/transele.E100.C.468.
Abstract: We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.468/_p
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@ARTICLE{e100-c_5_468,
author={Yusuke KATO, Akio OHTA, Mitsuhisa IKEDA, Katsunori MAKIHARA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors},
year={2017},
volume={E100-C},
number={5},
pages={468-474},
abstract={We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.},
keywords={},
doi={10.1587/transele.E100.C.468},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
T2 - IEICE TRANSACTIONS on Electronics
SP - 468
EP - 474
AU - Yusuke KATO
AU - Akio OHTA
AU - Mitsuhisa IKEDA
AU - Katsunori MAKIHARA
AU - Seiichi MIYAZAKI
PY - 2017
DO - 10.1587/transele.E100.C.468
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - We have studied the formation of Ti-nanodots (NDs) by remote H2 plasma (H2-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiOx) because it is expected that NDs will trigger the formation of the conductive filament path in SiOx. Ti-NDs with an areal density as high as 1011 cm-2 were fabricated by exposing a Ge/Ti stacked layer to the H2-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiOx with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiOx with a Ti thin layer.
ER -
English
