1-2hit |
Koichi IIYAMA Noriaki SANNOU Hideki TAKAMATSU
A silicon lateral photodiode is fabricated by standard 0.18 µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22 µm and the electrode spacing of 0.6 µm. At 830 nm wavelength, the responsivity is 0.12 A/W at low bias voltage, and is increased to 0.6 A/W due to avalanche amplification. The bandwidth is also enhanced from 12 MHz at low bias voltage to 100 MHz at the bias voltage close to the breakdown voltage.
Tomomi YOSHIMOTO Shawn G. THOMAS Kang L. WANG Bahram JALALI
A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) passive waveguide is demonstrated. The absorption layer of the detector consisits of alternating layers of 66 Ge0. 44Si0. 56 and 480 Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0. 2 A/W at 1. 3 µm wavelength.