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Hirotake KAJII Masato ISE Hitoshi TANAKA Takahiro OHTOMO Yutaka OHMORI
The effects of the gate dielectrics on ambipolar transport in top-gate-type polymer light-emitting transistors with single-layer and bilayer gate dielectrics are investigated. Hole field-effect mobility is dependent on the dielectric constant of the gate dielectric onto the active layer. Hole transport of devices is affected by the dipolar disorder in the first gate dielectric layer on the active layer. Electron threshold voltage tends to decrease with increasing the total stacked gate capacitance.
Shinya MIMURA Tomomi NAKAMURA Hiroyoshi NAITO Takaaki DOHMARU Shin SATOH
Electron and hole transport in polymethylphenylsilane (PMPS) containing anthracene units in the polymer backbone (PMPS-AN) has been studied by time-of-flight and electrophotographic measurements. It is found that the hole transport of PMPS-AN is non-dispersive and exhibits thermally activated behavior. The anthracene incorporation to the polymer backbone of PMPS slightly decreases the hole drift mobility of PMPS-AN because of the increase in energetic disorder. In PMPS-AN, the electron transport, which has not been observed in organic polysilanes, is clearly seen. In contrast to the hole transport, the electron transport exhibits anomalous dispersion of the transit times and the electron drift mobility is independent of temperature. It is suggested that the electron transport is due to geometrical disorder of electron hopping sites (anthracene units). From the electrophotographic measurements, we discuss the applicability of PMPS-AN to photoreceptors and estimate the Schubweg of electrons in PMPS-AN.