785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70 of the carbon doped LD is reduced by about 15% from that of zinc doped one. Highly reliable 160 mW pulsed operation is also realized at 70. This LD believed to be suited for the next generation high-speed (16-24x) CD-R drives necessitating 160 mW class LD.

Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) technology for millimeter-wave application is presented. Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1 1020 /cm3 has been achieved using a chemical beam epitaxy (CBE). Heavily carbon-doped base InP/InGaAs HBT epi structures were grown and small area, self-aligned HBTs with 1.5 µm emitter finger width were fabricated using triple mesa etching and polyimide planarization techniques. The fabricated small area transistors showed a common-emitter current gain cut-off frequency (fT) as high as 200 GHz. Preliminary device reliability test results showed the potential of the heavily carbon-doped base InP/InGaAs HBT for high performance microwave and millimeter-wave applications. Applications of the InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) to a direct-coupled feedback amplifier and a power transistor, respectively, are presented.

This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm2 yields an fT of 103 GHz and an fmax of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm2 in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.