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AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R

Tetsuya YAGI, Yoshihisa TASHIRO, Shinji ABE, Harumi NISHIGUCHI, Yuji OHKURA, Akihiro SHIMA, Etsuji OMURA

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Summary :

785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70 of the carbon doped LD is reduced by about 15% from that of zinc doped one. Highly reliable 160 mW pulsed operation is also realized at 70. This LD believed to be suited for the next generation high-speed (16-24x) CD-R drives necessitating 160 mW class LD.

Publication
IEICE TRANSACTIONS on Electronics Vol.E85-C No.1 pp.52-57
Publication Date
2002/01/01
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
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