785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70
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Tetsuya YAGI, Yoshihisa TASHIRO, Shinji ABE, Harumi NISHIGUCHI, Yuji OHKURA, Akihiro SHIMA, Etsuji OMURA, "AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 52-57, January 2002, doi: .
Abstract: 785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_52/_p
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@ARTICLE{e85-c_1_52,
author={Tetsuya YAGI, Yoshihisa TASHIRO, Shinji ABE, Harumi NISHIGUCHI, Yuji OHKURA, Akihiro SHIMA, Etsuji OMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R},
year={2002},
volume={E85-C},
number={1},
pages={52-57},
abstract={785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R
T2 - IEICE TRANSACTIONS on Electronics
SP - 52
EP - 57
AU - Tetsuya YAGI
AU - Yoshihisa TASHIRO
AU - Shinji ABE
AU - Harumi NISHIGUCHI
AU - Yuji OHKURA
AU - Akihiro SHIMA
AU - Etsuji OMURA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - 785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70
ER -