We have demonstrated tunable extit{n}-channel fullerene and extit{p}-channel pentacene OFETs and CMOS inverter circuit based on a bilayer-dielectric structure of CYTOP (poly(perfluoroalkenyl vinyl ether)) electret and SiO$_{2}$. For both OFET types, the $V_{mathrm{th}}$ can be electrically tuned thanks to the charge-trapping at the interface of CYTOP and SiO$_{2}$. The stability of the shifted $V_{mathrm{th}}$ was investigated through monitoring a change in transistor current. The measured transistor current versus time after programming fitted very well with a stretched-exponential distribution with a long time constant up to 10$^{6}$ s. For organic CMOS inverter, after applying the program gate voltages for extit{n}-channel fullerene or extit{p}-channel pentacene elements, the voltage transfer characteristics were shifted toward more positive values, resulting in a modulation of the noise margin. We realized that at a program gate voltage of 60,V for extit{p}-channel OFET, the circuit switched at 4, 8,V, that is close to half supply voltage $V_{mathrm{DD}}$, leading to the maximum electrical noise immunity of the inverter circuit.