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Yoshiro TAKIGUCHI Katsunori OSADA Masakazu NANBA Kazunori MIYAKAWA Saburo OKAZAKI Toshio YAMAGISHI Kenkichi TANIOKA Masahide ABE Norifumi EGAMI Mitsuru TANAKA Shigeo ITOH
To investigate the feasibility of a compact FEA image sensor with a large number of pixels, a 128 96 pixel FEA image sensor with a 4-µm-thick HARP target was fabricated and tested for the first time. The experimental results showed that the prototype could stably operate as a highly sensitive image sensor having both sufficient resolution corresponding to the number of pixels and a wide dynamic range, which demonstrated its potential as a next-generation image sensor.
Tanemasa ASANO Daisuke SASAGURI Katsuya HIGA
Ion beam irradiation effects on a novolac positive-tone photoresist and its application to micron-size field emitters have been investigated. Irradiation of Ar and P ions was examined. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Baking of the photoresist prior to irradiation at a high temperature is preferred to produce electrical conductivity. P ions show weaker effects than Ar ions. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission of electrons is observed from emitters made of the ion-irradiated photoresist. The emission current is shown to be fairly stable when it is compared with an emission characteristic of synthesized diamond. Fabrication of field emitter arrays using a mold technique is demonstrated. The field emitter array shows emission at a current level of about 40 µA.