Effects of field edge steps on characteristics of MOSFETs with tungsten polycide stacked gate electrodes patterned by KrF excimer laser lithography was studied through an electrical gate length measurement technique. Sheet resistance of the gate electrodes on the field oxide, on the active region and across the field edge steps was determined from the relationship between gate conductance and designed gate linewidth. The sheet resistance of the gate electrode across the field edge steps was larger than that on the flat regions. Effects of field edge steps on gate linewidth variation were evaluated by SEM observations and electrical measurements. Distribution of gate linewidth in a wafer was measured by the MOSFET test structures with the linewidth down to sub-quarter micron. Gate linewidth variation near the field edge steps was found to influence the short channel MOSFET characteristics.