IEICE TRANSACTIONS on Electronics
Effects of Field Edge Steps on Electrical Gate Linewidth Measurements
Summary :
Effects of field edge steps on characteristics of MOSFETs with tungsten polycide stacked gate electrodes patterned by KrF excimer laser lithography was studied through an electrical gate length measurement technique. Sheet resistance of the gate electrodes on the field oxide, on the active region and across the field edge steps was determined from the relationship between gate conductance and designed gate linewidth. The sheet resistance of the gate electrode across the field edge steps was larger than that on the flat regions. Effects of field edge steps on gate linewidth variation were evaluated by SEM observations and electrical measurements. Distribution of gate linewidth in a wafer was measured by the MOSFET test structures with the linewidth down to sub-quarter micron. Gate linewidth variation near the field edge steps was found to influence the short channel MOSFET characteristics.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.152-157
- Publication Date
- 1996/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microelectronic Test Structures)
- Category
- Device and Circuit Characterization
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Naoki KASAI, Ichiro YAMAMOTO, Koji URABE, Kuniaki KOYAMA, "Effects of Field Edge Steps on Electrical Gate Linewidth Measurements" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 2, pp. 152-157, February 1996, doi: .
Abstract: Effects of field edge steps on characteristics of MOSFETs with tungsten polycide stacked gate electrodes patterned by KrF excimer laser lithography was studied through an electrical gate length measurement technique. Sheet resistance of the gate electrodes on the field oxide, on the active region and across the field edge steps was determined from the relationship between gate conductance and designed gate linewidth. The sheet resistance of the gate electrode across the field edge steps was larger than that on the flat regions. Effects of field edge steps on gate linewidth variation were evaluated by SEM observations and electrical measurements. Distribution of gate linewidth in a wafer was measured by the MOSFET test structures with the linewidth down to sub-quarter micron. Gate linewidth variation near the field edge steps was found to influence the short channel MOSFET characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_2_152/_p
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@ARTICLE{e79-c_2_152,
author={Naoki KASAI, Ichiro YAMAMOTO, Koji URABE, Kuniaki KOYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Field Edge Steps on Electrical Gate Linewidth Measurements},
year={1996},
volume={E79-C},
number={2},
pages={152-157},
abstract={Effects of field edge steps on characteristics of MOSFETs with tungsten polycide stacked gate electrodes patterned by KrF excimer laser lithography was studied through an electrical gate length measurement technique. Sheet resistance of the gate electrodes on the field oxide, on the active region and across the field edge steps was determined from the relationship between gate conductance and designed gate linewidth. The sheet resistance of the gate electrode across the field edge steps was larger than that on the flat regions. Effects of field edge steps on gate linewidth variation were evaluated by SEM observations and electrical measurements. Distribution of gate linewidth in a wafer was measured by the MOSFET test structures with the linewidth down to sub-quarter micron. Gate linewidth variation near the field edge steps was found to influence the short channel MOSFET characteristics.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Effects of Field Edge Steps on Electrical Gate Linewidth Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 152
EP - 157
AU - Naoki KASAI
AU - Ichiro YAMAMOTO
AU - Koji URABE
AU - Kuniaki KOYAMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - Effects of field edge steps on characteristics of MOSFETs with tungsten polycide stacked gate electrodes patterned by KrF excimer laser lithography was studied through an electrical gate length measurement technique. Sheet resistance of the gate electrodes on the field oxide, on the active region and across the field edge steps was determined from the relationship between gate conductance and designed gate linewidth. The sheet resistance of the gate electrode across the field edge steps was larger than that on the flat regions. Effects of field edge steps on gate linewidth variation were evaluated by SEM observations and electrical measurements. Distribution of gate linewidth in a wafer was measured by the MOSFET test structures with the linewidth down to sub-quarter micron. Gate linewidth variation near the field edge steps was found to influence the short channel MOSFET characteristics.
ER -
English
