A new logic-in-memory VLSI architecture based on multiple-valued floating-gate-MOS pass-transistor logic is proposed to solve the communication bottleneck between memory and logic modules. Multiple-valued stored data are represented by the threshold voltage of a floating-gate MOS transistor, so that a single floating-gate MOS transistor is effectively employed to merge multiple-valued threshold-literal and pass-switch functions. As an application, a four-valued logic-in-memory VLSI for high-speed pattern recognition is also presented. The proposed VLSI detects a stored reference word with the minimum Manhattan distance between a 16-bit input word and 16-bit stored reference words. The effective chip area, the switching delay and the power dissipation of a new four-valued full adder, which is a key component of the proposed logic-in-memory VLSI, are reduced to about 33 percent, 67 percent and 24 percent, respectively, in comparison with those of the corresponding binary CMOS implementation under a 0.5-µm flash EEPROM technology.

This paper presents a 4-valued content-addressable memory (CAM) for fully parallel template-matching operations in real-time cellular logic image processing with fixed templates. A universal literal is essential to perform a multiple-valued template-matching operation. It is decomposed of a pair of a threshold operation in a CAM cell and a logic-value conversion shared by CAM cells in the same column of a CAM cellular array, which makes a CAM cell function simple. Since a threshold operation together with a 4-valued storage element can be designed by using a single floating-gate MOS transistor, a high-density 4-valued universal-literal CAM with a single-transistor cell can be implemented by using a multi-layer interconnection technology. It is demonstrated that the performance of the proposed CAM is much superior to that of conventional CAMs under the same function.