The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.