Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film
Summary :
The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.556-561
- Publication Date
- 1993/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Category
- Device Technology
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Takeo YAMASHITA, Tadahiro OHMI, "Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 4, pp. 556-561, April 1993, doi: .
Abstract: The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_556/_p
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@ARTICLE{e76-c_4_556,
author={Takeo YAMASHITA, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film},
year={1993},
volume={E76-C},
number={4},
pages={556-561},
abstract={The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film
T2 - IEICE TRANSACTIONS on Electronics
SP - 556
EP - 561
AU - Takeo YAMASHITA
AU - Tadahiro OHMI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.
ER -
English
