A 60-GHz CMOS transmitter with on-chip antenna for high-speed short-range wireless interconnections is presented. The radiation gain of the on-chip antenna is doubled using helium-3 ion irradiation technique. The transmitter core is composed of a resistive-feedback RF amplifier, a double-balanced passive mixer, and an injection-locked oscillator. The wideband and power-saving design of the transmitter core guarantees the low-power and high-data-rate characteristic. The transmitter fabricated in a 65-nm CMOS process achieves 5-Gb/s data rate with an EVM performance of $-$12 dB for BPSK modulation at a distance of 1,mm. The whole transmitter consumes 17,mW from a 1.2-V supply and occupies a core area of 0.64,mm$^{2}$ including the on-chip antenna. The gain-enhanced antenna together with the wideband and power-saving design of the transmitter provides a low-power low-cost full on-chip solution for the short-range high-data-rate wireless communication.

A low power bus architecture with Local and Global Charge-Recycling Bus (Local-CRB and Global-CRB) techniques, featuring virtual stacking of the individual bus-capacitance and the dummy capacitor into a series configuration between supply voltage and ground, has been proposed. These Local and Global CRB schemes make it possible to reduce not only each bus-swing but also a total equivalent bus-capacitance of the ultra multi-bit buses running in parallel. The voltage swing of each bus is given by the recycled charge-supplying from the upper adjacent bus capacitance or the dummy capacitor, instead of the power line. The dramatical power reduction was verified by the simulated and measured data. According to these data, if employing the combination of those CRB schemes in a practical chip, the ultra-high data rate of 25 Gb/s can be achieved while maintaining the power dissipation to be less than 300 mW at Vcc3.6 V for the bus width of 512 bit with the bus-capacitance of 14 pF per bit operating at 50 MHz.