A RF front-end chip for a dual-band Global Positioning System (GPS) receiver for L1 and L2 bands is designed using 0.25 µm CMOS technology. All function blocks of the GPS front-end are integrated onto one chip. The low noise amplifier has input matching over a wide frequency range to handle the L1 and L2 bands. This receiver uses a dual-band image-reject mixer with the quadrature mixer sharing a transconductor stage. This configuration enables the RF blocks to be shared with the L1 and L2 bands. The receiver has a chip area of 3.16 mm3.16 mm, and consumes 35 mA at 2.5 V.

This paper discusses the development of a monolithic image-rejection mixer with very wide-band (about 60% of the center frequency) image rejection characteristics for 16-QAM digital microwave radio communication receivers. The mixer can be commonly used in 4-, 5-, and 6-GHz bands, which reduces the cost. The mixer consists of a wide-band 90splitter, in-phase divider and drain LO injection mixers. They are designed on a single 2.81.8 mm2 GaAs chip based on a uniplanar MMIC lumped-constant element technique. The mixer achieved an image rejection ratio of greater than 25 dB and a conversion loss of less than 2 dB at a wide LO frequency range from 3.5 to 6.5 GHz, without consuming any DC power.