An intermediate frequency (IF) variable gain amplifier (VGA) with exponential gain control for a radio receiver is fabricated in 0.25-µm CMOS technology. The techniques to improve the bandwidth and to reduce temperature dependence of gain are described. The complete VGA is composed of two stages of linearized transconductance VGA and three stages of fixed gain amplifier (FGA). The complete VGA provides a continuous 10 dB to 76.5 dB gain control range, an IIP3 of -11.5 dBm and an NF of 15 dB at 40 MHz.

A demodulator for short-range wireless interconnect using ASK/CDMA technique has been developed with 0.25 µm CMOS technology. The fabricated demodulator demonstrates the demodulation of 7.35 Mbps bit rate with 31 spread spectrum code length at 10 GHz carrier frequency.

A new analog correlator circuit is proposed for direct sequence code division multiple access (DS-CDMA) demodulator. The circuit consists of only 16 switches, 4 capacitors and 2 level shifters. Control sequence requires only three clock phases. Simulation with code length of 127 reveals that the proposed circuit has a good ability to cancel off the charge error and dissipates 3.4mW at 128MHz. The circuit had been designed using a 0.6µm CMOS process. The area of 256µm 245µm is estimated to be 9 times smaller compared to other reported equivalent analog correlators.

Thickness dependence of breakdown properties in control and N2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N2O-oxynitridation reduces oxide defects near the Si/SiO2 interface. N2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).

We propose an ultra low power watch-dog circuit with the use of MOSFETs operation under subthreshold characteristics. The circuit monitors the amount of the product degradation because the subthreshold current of MOSFET emulates the rate of the general chemical reaction. Its operation was verified with both SPICE simulation and the measurement of the prototype chip. The new circuit embedded in a tag attached to any product could dynamically monitor the degradation regardless of storage conditions.

This paper describes a new architecture-based microprocessor, a dynamically programmable parallel processor (DPPP), that consists of large numbers of simplified ALUs (sALU) as processing blocks. All sALUs are interconnected via a code division multiple-access bus interface that provides complete routing flexibility by establishing connections virtually through code-matching instead of physical wires. This feature is utilized further to achieve high parallelism and fault tolerance. High fault tolerance is realized without the limitations of conventional fabrication-based techniques nor providing spare elements. Another feature of the DPPP is its simple programmability, as it can be configured by compiling numerical formula input using the provided user auto-program interface. A prototype chip based on the proposed architecture has been implemented on a 4.5 mm 4.5 mm chip using 0.6 µm CMOS process.

Wired CDMA interface with adaptivity for interconnect capacitances is designed to receive transmitted data even under a wide variety of connection topologies. The variable gain amplifier (VGA) is one of key circuit blocks to realize the adaptivity for interconnect capacitances. The system level numerical simulations derive the VGA specifications that the required VGA gain range is from 0.37 to 2.0, which can be realized easily using a multiple-differential-pair technique.

A signal detection system using noise statistical processing is proposed. By approaching the problems of low voltage and high noise from miniaturization of a device from a stochastic point of view, a faint-signal receiving system that can effectively detect subthreshold and noise level signals has been developed. In addition, an alternative to statistical processing is proposed, and would be successfully implemented on a circuit. For the proposed signal detection method, the detection sensitivity was investigated using numerical simulation, and the detection sensitivity was sufficiently high to detect even a signal with a signal-to-inherent-noise ratio of -14 dB. Thus, it is anticipated that the application of this system to an integrated circuit will have a significant impact on signal processing.

This paper introduces several techniques for achieving RF and analog CMOS circuits for wireless communication systems under ultra-low-voltage supply, such as 0.5 V. Forward body biasing and inverter-based circuit techniques were applied in the design of a feedforward Δ-ΣA/D modulator operating with a 0.5 V supply. Transformer utilization is also presented as an inductor area reduction technique. In addition, application of stochastic resonance to A/D conversion is discussed as a future technology.

This paper presents the design consideration of a four-stage variable gain amplifier (VGA) with a wide dynamic range for receivers. The VGA uses parallel amplifiers for the first and second amplifiers in order to improve the input third-order intercept point (IIP3) in the low gain region. To investigate the behavior of the VGA, the gain and linearity analyses are newly derived for the parallel amplifiers, and are compared with the measured results. In addition, the principle of the temperature compensation is described. The gain control range of 110 dB, the IP1 dB of -11 dBm, and noise figure (NF) of 5.1 dB were measured using a 0.5 µm 26 GHz fT BiCMOS process.

For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.

We present a low-voltage digitally-controlled oscillator (DCO) with the third-order ΔΣ modulator utilized in the medical implant communication service (MICS) frequency band. An optimized DCO core operating in the subthreshold region is designed, based on the gm/ID methodology. Thermometer coder with the dynamic element matching and ΔΣ modulator are implemented for the frequency tuning. High frequency resolution is achieved by using the ΔΣ modulator. The ΔΣ-modulator-based LC-DCO implemented in a 130-nm CMOS technology has achieved the phase noise of -115.3 dBc/Hz at 200 kHz offset frequency with the tuning range of 382 MHz to 412 MHz for the MICS band. It consumes 700 µW from a 0.7-V supply voltage and has a high frequency resolution of 18 kHz.

The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.

We propose a design methodology of a low-voltage CMOS low-noise amplifier (LNA) consisting of a common-source and a common-gate stages. We first derive equations of power gain, noise figure (NF) and input third-order intercept point (IIP3) of the two-stage LNA. A design methodology of the LNA is presented by using graphs based on analytical equations. A 1-V 5.4-GHz LNA was implemented in 0.15-µm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. Measurement results show a power gain of 23 dB, NF of 1.7 dB and IIP3 of -6.1 dBm with a power consumption of 8.3 mW. These measured results are consistent with calculated results, which ensures the validity of the derived equations and the proposed design methodology.

Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.

An efficient data transmission interface for VLSI systems, Multi-Bit Parallel Code Division Multiple Access (MB/P-CDMA) interface, has been designed with 0.35 µm CMOS technology. The proposed interface achieves 1.12 Gb/s data rate (80 MHz, 8 bit bus) using multi-bit transmission at each clock per transmitter. The proposed CDMA interface ensures higher speed operation than conventional interface even in noisy environments. Each of the transmitters and receivers occupies the die area of 290 360 µm2 and 240 280 µm2, respectively.

A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.

In the present paper, we propose a novel high-resolution analog-to-digital converter (ADC) for low-power biomedical analog front-ends, which we call the successive stochastic approximation ADC. The proposed ADC uses a stochastic flash ADC (SF-ADC) to realize a digitally controlled variable-threshold comparator in a successive-approximation-register ADC (SAR-ADC), which can correct errors originating from the internal digital-to-analog converter in the SAR-ADC. For the residual error after SAR-ADC operation, which can be smaller than thermal noise, the SF-ADC uses the statistical characteristics of noise to achieve high resolution. The SF-ADC output for the residual signal is combined with the SAR-ADC output to obtain high-precision output data using the supervised machine learning method.

This letter presents a 0.5 V low-voltage op-amp in a standard 0.18 µm CMOS process for switched-capacitor circuits. Unlike other two-stage 0.5 V op-amp architectures, this op-amp consists of CMOS inverters that utilize floating voltage sources and forward body bias for obtaining high-speed operation. And two improved common-mode rejection circuits are well combined to achieve low power and chip area reduction. Simulation results indicate that the op-amp has an open-loop gain of 62 dB, and a high unity gain bandwidth of 56 MHz. The power consumption is only 350 µW.

A new inductance extraction technique of spiral inductor from measurement fixture is presented. We propose a scalable expression of parasitic inductance for interconnects, and design consideration of test structure accommodating spiral inductor. The simple expression includes mutual inductance between the interconnects with high accuracy. The formula matches a commercial field solver inductance values within 1.4%. The layout of the test structure to reduce magnetic coupling between the spiral and the interconnects allows us to extract the intrinsic inductance of spiral more accurately. The proposed technique requires neither special fixture used for measurement-based method nor skilled worker for precise extraction with the analytical technique used.