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A Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier
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Summary :
Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.2 pp.187-199
- Publication Date
- 2010/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.187
- Type of Manuscript
- PAPER
- Category
- Integrated Electronics
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Takao KIHARA, Toshimasa MATSUOKA, Kenji TANIGUCHI, "A Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 2, pp. 187-199, February 2010, doi: 10.1587/transele.E93.C.187.
Abstract: Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.187/_p
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@ARTICLE{e93-c_2_187,
author={Takao KIHARA, Toshimasa MATSUOKA, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier},
year={2010},
volume={E93-C},
number={2},
pages={187-199},
abstract={Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.},
keywords={},
doi={10.1587/transele.E93.C.187},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - A Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 187
EP - 199
AU - Takao KIHARA
AU - Toshimasa MATSUOKA
AU - Kenji TANIGUCHI
PY - 2010
DO - 10.1587/transele.E93.C.187
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2010
AB - Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.
ER -
English
