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IEICE TRANSACTIONS on Electronics

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Advance publication (published online immediately after acceptance)

Volume E93-C No.2  (Publication Date:2010/02/01)

    Regular Section
  • Wavelength Dependence of Optical Waveguide-Type Devices for Recognition of QPSK Routing Labels

    Yoshihiro MAKIMOTO  Hitoshi HIURA  Nobuo GOTO  Shin-ichiro YANAGIYA  

     
    PAPER-Optoelectronics

      Page(s):
    157-163

    In photonic label routing networks, recognition of optical labels is one of the key functions. We have proposed passive waveguide-type devices for recognition of optical labels coded in quadri-phase-shift-keying (QPSK) form. In this paper, we consider wavelength dependence of the devices. The basic module of the proposed device consists of a 3-dB directional coupler, two Y-junctions, and an asymmetric X-junction. The Y-junction and an asymmetric X-junction have basically no wavelength dependence. Although the 3-dB directional coupler has weak wavelength dependence, the device for two-symbol label recognition is found to work in wavelength 1.5-1.6 µm. The performance of the device is confirmed by simulation using beam propagation method (BPM).

  • Analysis of Inductive Coupling and Design of Rectifier Circuit for Inter-Chip Wireless Power Link

    Yuxiang YUAN  Yoichi YOSHIDA  Tadahiro KURODA  

     
    PAPER-Electronic Circuits

      Page(s):
    164-171

    A wireless power link utilizing inductive coupling is developed between stacked chips. In this paper, we discuss inductor layout optimization and rectifier circuit design. The inductive-coupling power link is analyzed using simple equivalent circuit models. On the basis of the analytic models, the inductor size is minimized for the given required power on the receiver chip. Two kinds of full-wave rectifiers are discussed and compared. Various low-power circuit design techniques for rectifiers are employed to decrease the substrate leakage current, reduce the possibility of latch-up, and improve the power transmission efficiency and the high-frequency performance of the rectifier block. Test chips are fabricated in a 0.18 µm CMOS process. With a pair of 700700 µm2 on-chip inductors, the test chips achieve 10% peak efficiency and 36 mW power transmission. Compared with the previous work the received power is 13 times larger for the same inductor size .

  • A Methodology for the Design of MOS Current-Mode Logic Circuits

    Giuseppe CARUSO  Alessio MACCHIARELLA  

     
    PAPER-Electronic Circuits

      Page(s):
    172-181

    In this paper, a design methodology for the minimization of various performance metrics of MOS Current-Mode Logic (MCML) circuits is described. In particular, it allows to minimize the delay under a given power consumption, the power consumption under a given delay and the power-delay product. Design solutions can be evaluated graphically or by simple and effective automatic procedures implemented within the MATLAB environment. The methodology exploits the novel concepts of crossing-point current and crossing-point capacitance. A useful feature of it is that it provides the designer with useful insights into the dependence of the performance metrics on design variables and fan-out capacitance. The methodology was validated by designing several MCML circuits in an IBM 130 nm CMOS process.

  • A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

    Myounggon KANG  Ki-Tae PARK  Youngsun SONG  Sungsoo LEE  Yunheub SONG  Young-Ho LIM  

     
    PAPER-Electronic Circuits

      Page(s):
    182-186

    A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

  • A Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier Open Access

    Takao KIHARA  Toshimasa MATSUOKA  Kenji TANIGUCHI  

     
    PAPER-Integrated Electronics

      Page(s):
    187-199

    Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90 nm digital CMOS process. It occupies 0.12 mm2 and achieves |S11|<-10 dB, NF<4.4 dB, and |S21|>9.3 dB across 3.1-10.6 GHz with a power consumption of 2.5 mW from a 1.0 V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.

  • New Cost-Effective Driving Circuit for Plasma-TV

    Jae Kwang LIM  Heung-Sik TAE  Dong-Ho LEE  Kazuhiro ITO  Jung Pil PARK  

     
    PAPER-Electronic Displays

      Page(s):
    200-204

    Unlike the conventional plasma-TVs using the driving circuit with two polarities during the reset and address periods, the cost-effective driving circuit using only the positive voltage level during the reset and address periods is proposed and implemented in the 42-in. plasma-TV.

  • A Novel Coupler Based on HMSIW

    Haiyan JIN  Li JIAN  Guangjun WEN  

     
    LETTER-Microwaves, Millimeter-Waves

      Page(s):
    205-207

    In this letter, a broadband coupler is presented that makes use of a half mode substrate integrated waveguide (HMSIW) technique using a printed circuit board process. The coupler is realized by a parallel HMSIW line which couples energy by magnetic field. Compared with micro-strip coupler and conventional HMSIW coupler, it has lower loss and better Electromagnetic Compatibility owning to the closed field structure. Compared with SIW coupler, it has smaller size and lower cost owing to the half TE10 model. The coupler is simulated and measured at 8-12 GHz. Measured results show a good agreement with simulation.

  • High Frequency Resolution DCO with Mismatched Capacitor Pairs

    Depeng JIN  Guofei ZHOU  Yong LI  Shijun LIN  Li SU  Lieguang ZENG  

     
    LETTER-Electronic Circuits

      Page(s):
    208-210

    The LC-based Digitally Controlled Oscillator (DCO) is one of the most important components of all digital phase locked loops. The performance of the loops is significantly determined by the DCO's frequency resolution. In order to enhance the frequency resolution, we propose a mismatched capacitor pairs based digitally controlled switched capacitance array, which dramatically reduces the minimum switched varactor capacitance. Furthermore, we implement a DCO based on our proposal in SMIC 0.18 µm and conduct simulation in Spectre. The simulation results show that the frequency resolution is enhanced compared with the existing methods.

  • Plasma Polymerization for Protein Patterning: Reversible Formation with Fullerene Modification

    Hayato TAKAHASHI  Naoya MURATA  Hitoshi MUGURUMA  

     
    LETTER-Organic Molecular Electronics

      Page(s):
    211-213

    Partial plasma polymerization for coexistence of hydrophobic/hydrophilic area in several ten micrometer size is the typical technique for protein patterning. A hydrophobic hexamethyldisiloxane plasma-polymerized film (HMDS PPF) was deposited on a glass substrate and this surface was partially modified by subsequent nitrogen plasma treatment (hydrophilic surface, HMDS-N PPF) with a patterned shadow mask. An antibody protein (F(ab')2 fragment of anti-human immunoglobulin G) was selectively adsorbed onto the HMDS-N area and was not adsorbed onto the HMDS area. Distinct 8080 µm2 square spots surrounded by a non-protein adsorbed 80 µm-wide grid were observed. Then, when the protein modified by fullerene was used, the reversible patterning was obtained. This indicated that the modification by fullerene changed the hydrophilic nature of F(ab')2 protein to hydrophobic one, as a result, the modified protein was selectively adsorbed onto hydrophobic area.