In this letter, to improve the beam quality of the thin film energy transfer dye laser (thin film ETDL), DFB oscillator-amplifier system of it has been studied. This system is simply constracted on the one prism and operates as a compact solid dye laser under N2 laser pumping.

We propose a design methodology of a low-voltage CMOS low-noise amplifier (LNA) consisting of a common-source and a common-gate stages. We first derive equations of power gain, noise figure (NF) and input third-order intercept point (IIP3) of the two-stage LNA. A design methodology of the LNA is presented by using graphs based on analytical equations. A 1-V 5.4-GHz LNA was implemented in 0.15-µm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. Measurement results show a power gain of 23 dB, NF of 1.7 dB and IIP3 of -6.1 dBm with a power consumption of 8.3 mW. These measured results are consistent with calculated results, which ensures the validity of the derived equations and the proposed design methodology.