Accurate Small-Signal Modeling of FD-SOI MOSFETs
Summary :
A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.4 pp.517-519
- Publication Date
- 2006/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.4.517
- Type of Manuscript
- Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- Category
Authors
Guechol KIM
Yoshiyuki SHIMIZU
Bunsei MURAKAMI
Masaru GOTO
Keisuke UEDA
Takao KIHARA
Toshimasa MATSUOKA
Kenji TANIGUCHI
Keyword
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Guechol KIM, Yoshiyuki SHIMIZU, Bunsei MURAKAMI, Masaru GOTO, Keisuke UEDA, Takao KIHARA, Toshimasa MATSUOKA, Kenji TANIGUCHI, "Accurate Small-Signal Modeling of FD-SOI MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 4, pp. 517-519, April 2006, doi: 10.1093/ietele/e89-c.4.517.
Abstract: A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.4.517/_p
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@ARTICLE{e89-c_4_517,
author={Guechol KIM, Yoshiyuki SHIMIZU, Bunsei MURAKAMI, Masaru GOTO, Keisuke UEDA, Takao KIHARA, Toshimasa MATSUOKA, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Accurate Small-Signal Modeling of FD-SOI MOSFETs},
year={2006},
volume={E89-C},
number={4},
pages={517-519},
abstract={A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.},
keywords={},
doi={10.1093/ietele/e89-c.4.517},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Accurate Small-Signal Modeling of FD-SOI MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 517
EP - 519
AU - Guechol KIM
AU - Yoshiyuki SHIMIZU
AU - Bunsei MURAKAMI
AU - Masaru GOTO
AU - Keisuke UEDA
AU - Takao KIHARA
AU - Toshimasa MATSUOKA
AU - Kenji TANIGUCHI
PY - 2006
DO - 10.1093/ietele/e89-c.4.517
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2006
AB - A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz.
ER -
English
