Threshold Voltage Mismatch of FD-SOI MOSFETs
Summary :
The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.6 pp.1013-1014
- Publication Date
- 2004/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
- Category
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Yoshiyuki SHIMIZU, Toshimasa MATSUOKA, Kenji TANIGUCHI, "Threshold Voltage Mismatch of FD-SOI MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 6, pp. 1013-1014, June 2004, doi: .
Abstract: The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_6_1013/_p
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@ARTICLE{e87-c_6_1013,
author={Yoshiyuki SHIMIZU, Toshimasa MATSUOKA, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Threshold Voltage Mismatch of FD-SOI MOSFETs},
year={2004},
volume={E87-C},
number={6},
pages={1013-1014},
abstract={The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Threshold Voltage Mismatch of FD-SOI MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1013
EP - 1014
AU - Yoshiyuki SHIMIZU
AU - Toshimasa MATSUOKA
AU - Kenji TANIGUCHI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2004
AB - The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.
ER -
English
