IEICE TRANSACTIONS on Electronics
A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance
Summary :
For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.7 pp.1428-1435
- Publication Date
- 2002/07/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
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Mitsuo NAKAMURA, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI, "A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1428-1435, July 2002, doi: .
Abstract: For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1428/_p
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@ARTICLE{e85-c_7_1428,
author={Mitsuo NAKAMURA, Hideki SHIMA, Toshimasa MATSUOKA, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance},
year={2002},
volume={E85-C},
number={7},
pages={1428-1435},
abstract={For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 1428
EP - 1435
AU - Mitsuo NAKAMURA
AU - Hideki SHIMA
AU - Toshimasa MATSUOKA
AU - Kenji TANIGUCHI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-µm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
ER -
English
