IEICE TRANSACTIONS on Electronics
Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
Summary :
Thickness dependence of breakdown properties in control and N2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N2O-oxynitridation reduces oxide defects near the Si/SiO2 interface. N2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
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- IEICE TRANSACTIONS on Electronics Vol.E78-C No.3 pp.248-254
- Publication Date
- 1995/03/25
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- Online ISSN
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- Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
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Toshimasa MATSUOKA, Shigenari TAGUCHI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Seizo KAKIMOTO, Junkou TAKAGI, "Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 3, pp. 248-254, March 1995, doi: .
Abstract: Thickness dependence of breakdown properties in control and N2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N2O-oxynitridation reduces oxide defects near the Si/SiO2 interface. N2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_3_248/_p
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@ARTICLE{e78-c_3_248,
author={Toshimasa MATSUOKA, Shigenari TAGUCHI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Seizo KAKIMOTO, Junkou TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides},
year={1995},
volume={E78-C},
number={3},
pages={248-254},
abstract={Thickness dependence of breakdown properties in control and N2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N2O-oxynitridation reduces oxide defects near the Si/SiO2 interface. N2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
T2 - IEICE TRANSACTIONS on Electronics
SP - 248
EP - 254
AU - Toshimasa MATSUOKA
AU - Shigenari TAGUCHI
AU - Kenji TANIGUCHI
AU - Chihiro HAMAGUCHI
AU - Seizo KAKIMOTO
AU - Junkou TAKAGI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1995
AB - Thickness dependence of breakdown properties in control and N2O-Oxynitrided oxides was investigated. Nitrogen atoms piled up at the Si/SiO2 interface increase charge-to-breakdown (QBD) under substrate injection conditions for oxide thickness below 10 nm, while no meaningful improvement is observed above 10 nm. This thickness dependence is explained by the fact that N2O-oxynitridation reduces oxide defects near the Si/SiO2 interface. N2O-oxynitridation of the oxides reduces the number of neutral electron traps due to the chemical reaction of oxide defect with nitrogen atoms. Electron trapping of N2O-oxynitrided oxides is significantly suppressed; the reduction of electron trapping events into neutral electron traps increases QBD under substrate injection. On the other hand, under gate injection, N2O-oxynitrided oxides show low rate of hole trapping during the initial stress period. However, in heavily injected condition, electron trapping is not suppressed, resulting in little improvement of QBD. In addition, the control and N2O-oxynitrided oxides show quite similar dependence of QBD on stress current density, which is related primarily to the carrier transport phenomena (tunneling, traveling, impact ionization and hole injection).
ER -
English
