Negation as failure is realized to be combined with SLD resolution for general logic programs, where the combined resolution is called an SLDNF resolution. In this paper, we introduce narrowing and infinite failure to SLDNF resolution for general logic programs with equations. The combination of SLDNF resolution with narrowing and infinite failure is called an SLDNFN resolution. In Shepherdson (1992), equation theory is combined with SLDNF resolution so that the soundness may be guaranteed with respect to Clark's completion. Generalizing the method of Yamamoto (1987) for definite clause sets with equations, we formally define a least fixpoint semantics, which is an extension of Fitting (1985) and Kunen (1987) semantics, and which includes the pair of success and failure sets defined by the SLDNFN resolution. The relationship between the fixpoint semantics and the pair of sets is regarded as an extension of the relationships for general logic programs as in Marriott and et al. (1992) and in Yamasaki (1996). Instead of generalizing Clark's completion for SLDNFN resolution, we establish, as a model for general logic programs with equations, an extended well-founded model so that the SLDNFN resolution is sound and complete for non-floundering queries with respect to the extended well-founded model.

There have been semantics for logic programs as sets of definite clauses over sequence domains in [2],[6]. The sequence of substitutions caused by resolutions for logic programs can be captured by a fixpoint of a functional [3],[16]. In [15], a functional is regarded as a behaviour of a dataflow network, the semantics over sequence domains induces dataflow computing for logic programs. Also it may provide a transformation of logic programs to functional programs[16]. Motivated by dataflow computing constructions for logic programming, this paper deals with fixpoint semantics over sequence domains for logic programs with equations and negations. A transformation, representing deductions caused by resolutions and narrowings, is associated with a logic program with equations, modified from the operator in [18], so that it may be represented by a continuous functional over a sequence domain, and its least fixpoint is well-defined. An explicit construction of such a continuous functional of sequence variables is necessary for dataflow computing, and we should prove that the functional of sequence variables can exactly represent the transformation concerned with sets. For a general logic program, a functional is constructed over a sequence domain so that it may reflect a consistency-preserving renewal function for the pair of atom sets on the basis of the 3-valued logic approach as in [7], and [11]. It is a problem to construct the domain for the functional representing a generation of atom sets interpreted as true and negation as failure in the generation, for general logic programs. The functional is monotonic over a complete partial order and its least fixpoint is well-defined, although the least fixpoint is not always obtained by the limit of finite computing, because of the functional being not necessarily continuous.

We present outside-in conditional narrowing for orthogonal conditional term rewriting systems, and show the completeness of leftmost-outside-in conditional narrowing with respect to normalizable solutions. We consider orthogonal conditional term rewriting systems whose conditions consist of strict equality only. Completeness results are obtained for systems both with and without extra variables. The result bears practical significance since orthogonal conditional term rewriting systems can be viewed as a computation model for functional-logic programming languages and leftmost-outside-in conditional narrowing is the computing mechanism for the model.

The theoretical modelling bandgap narrowing and percentage of ionized impurity atoms for uncompensated uniformly doped silicon containing conventional impurities (B, P, As, Sb) under thermodynamic-equilibrium conditions is presented. As distinct from existing approaches, this modelling is valid for impurity concentrations up to electrically-active-impurity-concentration limits and for the temperature range from 40 K up to 400 K. A relevant and efficient calculation software is proposed. The results of the calculations are compared with the results extracted by many authors from measurement data. A good agreement between these results is noted and possible reasons of some discrepancies are pointed out. The present modelling and software can be used for investigation of BJT charge-neutral regions as well as diffused or implanted resistors.

We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.