Non-Volatile Memories (NVMs) are considered as promising memory technologies for Last-Level Cache (LLC) due to their low leakage and high density. However, NVMs have some drawbacks such as high dynamic energy in modifying NVM cells, long latency for write operation, and limited write endurance. A number of approaches have been proposed to overcome these drawbacks. But very little attention is paid to consider the cache coherency issue. In this letter, we suggest a new cache coherence protocol to reduce the write operations of the LLC. In our protocol, the block data of the LLC is updated only if the cache block is written-back from a private cache, which leads to avoiding useless write operations in the LLC. The simulation results show that our protocol provides 27.1% energy savings and 26.3% lifetime improvements in STT-RAM at maximum.

We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.