Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories
Summary :
We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.566-571
- Publication Date
- 1998/04/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
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Hitoshi TABATA, Takeshi YANAGITA, Tomoji KAWAI, "Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 566-571, April 1998, doi: .
Abstract: We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_566/_p
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@ARTICLE{e81-c_4_566,
author={Hitoshi TABATA, Takeshi YANAGITA, Tomoji KAWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories},
year={1998},
volume={E81-C},
number={4},
pages={566-571},
abstract={We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 566
EP - 571
AU - Hitoshi TABATA
AU - Takeshi YANAGITA
AU - Tomoji KAWAI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.
ER -
English
