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[Keyword] phase frequency detector(2hit)

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  • Optimized Charge Pump and Nonlinear Phase Frequency Detector for a Ka-Band Phase-Locked Loop in 90-nm CMOS Process

    Lu TANG  Zhigong WANG  Tiantian FAN  Faen LIU  Changchun ZHANG  

     
    PAPER-Electronic Circuits

      Pubricized:
    2019/06/07
      Vol:
    E102-C No:11
      Page(s):
    825-832

    In this paper, an improved charge pump (CP) and a modified nonlinear phase frequency detector (PFD) are designed and fabricated in a 90-nm CMOS process. The CP is optimized with a combination of circuit techniques such as pedestal error cancel scheme to eliminate the charge injection and the other non-ideal characteristics. The nonlinear PFD is based on a modified circuit topology to enhance the acquisition capability of the PLL. The optimized CP and nonlinear PFD are integrated into a Ka-band PLL. The measured output current mismatch ratio of the improved CP is less than 1% when the output voltage Vout fluctuates between 0.2 to 1.1V from a 1.2V power supply. The measured phase error detection range of the modified nonlinear PFD is between -2π and 2π. Owing to the modified CP and PFD, the measured reference spur of the Ka-band PLL frequency synthesizer containing the optimized CP and PFD is only -56.409dBc at 30-GHz at the locked state.

  • A Fractional-N PLL with Dual-Mode Detector and Counter

    Fitzgerald Sungkyung PARK  Nikolaus KLEMMER  

     
    BRIEF PAPER-Integrated Electronics

      Vol:
    E95-C No:12
      Page(s):
    1887-1890

    A fractional-N phase-locked loop (PLL) is designed for the DigRF interface. The digital part of the PLL mainly consists of a dual-mode phase frequency detector (PFD), a digital counter, and a digital delta-sigma modulator (DSM). The PFD can operate on either 52 MHz or 26 MHz reference frequencies, depending on its use of only the rising edge or both the rising and the falling edges of the reference clock. The interface between the counter and the DSM is designed to give enough timing margin in terms of the signal round-trip delay. The circuitry is implemented using a 90-nm CMOS process technology with a 1.2-V supply, draining 1 mA.