Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1-1.5 with gate length LG, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.

We have constructed a new concept device with combination of ferroelectric and ferromagnetic materials by a laser ablation technique. An ideal hetero-epitaxy can be obtained owing to the similar crystal structure of perovskite type ferroelectric Pb (Zr, Ti) O3; (so called PZT) and ferromagnetic (La, Sr) MnO3. The ferromagnetic (La, Sr) MnO3 compounds are well known for their colossal magnetoresistance (CMR) properties. The CMR effect is strongly affected by the lattice stress. The PZT, on the other hand, is famous for its large piezoelectrics. We can introduce the lattice stress easily by applying voltage for the piezoelectric compounds. In the heterostructured ferromagnetic/ferroelectric devices, there are remarkable interesting phenomena. Electric properties of the ferromagnetic material can be controlled by piezoelectric effect via distortion of crystal structure.