Novel Electronic Properties on Ferroelectric/ferromagnetic Heterostructures

Hitoshi TABATA; Tomoji KAWAI

Novel Electronic Properties on Ferroelectric/ferromagnetic Heterostructures

Hitoshi TABATA, Tomoji KAWAI

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We have constructed a new concept device with combination of ferroelectric and ferromagnetic materials by a laser ablation technique. An ideal hetero-epitaxy can be obtained owing to the similar crystal structure of perovskite type ferroelectric Pb (Zr, Ti) O₃; (so called PZT) and ferromagnetic (La, Sr) MnO₃. The ferromagnetic (La, Sr) MnO₃ compounds are well known for their colossal magnetoresistance (CMR) properties. The CMR effect is strongly affected by the lattice stress. The PZT, on the other hand, is famous for its large piezoelectrics. We can introduce the lattice stress easily by applying voltage for the piezoelectric compounds. In the heterostructured ferromagnetic/ferroelectric devices, there are remarkable interesting phenomena. Electric properties of the ferromagnetic material can be controlled by piezoelectric effect via distortion of crystal structure.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.7 pp.918-923

Publication Date: 1997/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)

Category: Novel Concept Devices

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Hitoshi TABATA, Tomoji KAWAI, "Novel Electronic Properties on Ferroelectric/ferromagnetic Heterostructures" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 7, pp. 918-923, July 1997, doi: .
Abstract: We have constructed a new concept device with combination of ferroelectric and ferromagnetic materials by a laser ablation technique. An ideal hetero-epitaxy can be obtained owing to the similar crystal structure of perovskite type ferroelectric Pb (Zr, Ti) O₃; (so called PZT) and ferromagnetic (La, Sr) MnO₃. The ferromagnetic (La, Sr) MnO₃ compounds are well known for their colossal magnetoresistance (CMR) properties. The CMR effect is strongly affected by the lattice stress. The PZT, on the other hand, is famous for its large piezoelectrics. We can introduce the lattice stress easily by applying voltage for the piezoelectric compounds. In the heterostructured ferromagnetic/ferroelectric devices, there are remarkable interesting phenomena. Electric properties of the ferromagnetic material can be controlled by piezoelectric effect via distortion of crystal structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_7_918/_p

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@ARTICLE{e80-c_7_918,
author={Hitoshi TABATA, Tomoji KAWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Electronic Properties on Ferroelectric/ferromagnetic Heterostructures},
year={1997},
volume={E80-C},
number={7},
pages={918-923},
abstract={We have constructed a new concept device with combination of ferroelectric and ferromagnetic materials by a laser ablation technique. An ideal hetero-epitaxy can be obtained owing to the similar crystal structure of perovskite type ferroelectric Pb (Zr, Ti) O₃; (so called PZT) and ferromagnetic (La, Sr) MnO₃. The ferromagnetic (La, Sr) MnO₃ compounds are well known for their colossal magnetoresistance (CMR) properties. The CMR effect is strongly affected by the lattice stress. The PZT, on the other hand, is famous for its large piezoelectrics. We can introduce the lattice stress easily by applying voltage for the piezoelectric compounds. In the heterostructured ferromagnetic/ferroelectric devices, there are remarkable interesting phenomena. Electric properties of the ferromagnetic material can be controlled by piezoelectric effect via distortion of crystal structure.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Novel Electronic Properties on Ferroelectric/ferromagnetic Heterostructures
T2 - IEICE TRANSACTIONS on Electronics
SP - 918
EP - 923
AU - Hitoshi TABATA
AU - Tomoji KAWAI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1997
AB - We have constructed a new concept device with combination of ferroelectric and ferromagnetic materials by a laser ablation technique. An ideal hetero-epitaxy can be obtained owing to the similar crystal structure of perovskite type ferroelectric Pb (Zr, Ti) O₃; (so called PZT) and ferromagnetic (La, Sr) MnO₃. The ferromagnetic (La, Sr) MnO₃ compounds are well known for their colossal magnetoresistance (CMR) properties. The CMR effect is strongly affected by the lattice stress. The PZT, on the other hand, is famous for its large piezoelectrics. We can introduce the lattice stress easily by applying voltage for the piezoelectric compounds. In the heterostructured ferromagnetic/ferroelectric devices, there are remarkable interesting phenomena. Electric properties of the ferromagnetic material can be controlled by piezoelectric effect via distortion of crystal structure.
ER -