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[Keyword] schottky barrier diodes(1hit)

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  • Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter

    Katsumi KAWAI  Naoki SHINOHARA  Tomohiko MITANI  

     
    PAPER-Microwaves, Millimeter-Waves

      Pubricized:
    2022/08/16
      Vol:
    E106-C No:2
      Page(s):
    50-58

    This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.