IEICE TRANSACTIONS on Electronics
Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter
Summary :
This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E106-C No.2 pp.50-58
- Publication Date
- 2023/02/01
- Publicized
- 2022/08/16
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021ECP5064
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Katsumi KAWAI
Kyoto University
Naoki SHINOHARA
Kyoto University
Tomohiko MITANI
Kyoto University
Keyword
Latest Issue
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Katsumi KAWAI, Naoki SHINOHARA, Tomohiko MITANI, "Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 2, pp. 50-58, February 2023, doi: 10.1587/transele.2021ECP5064.
Abstract: This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5064/_p
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@ARTICLE{e106-c_2_50,
author={Katsumi KAWAI, Naoki SHINOHARA, Tomohiko MITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter},
year={2023},
volume={E106-C},
number={2},
pages={50-58},
abstract={This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.},
keywords={},
doi={10.1587/transele.2021ECP5064},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Novel Structure of Single-Shunt Rectifier Circuit with Impedance Matching at Output Filter
T2 - IEICE TRANSACTIONS on Electronics
SP - 50
EP - 58
AU - Katsumi KAWAI
AU - Naoki SHINOHARA
AU - Tomohiko MITANI
PY - 2023
DO - 10.1587/transele.2021ECP5064
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2023
AB - This study proposes a new structure of a single-shunt rectifier circuit that can reduce circuit loss and improve efficiency over the conventional structure. The proposed structure can provide impedance matching to the measurement system (or receiving antenna) without the use of conventional matching circuits, such as stubs and tapers. The proposed structure can simultaneously perform full-wave rectification and impedance matching by placing a feeding point on the output filter's λ/4 transmission line. We use circuit simulation to compare the RF-DC conversion efficiency and circuit loss of the conventional and proposed structures. The simulation results show that the proposed structure has lower circuit loss and higher RF-DC conversion efficiency than the conventional structure. We fabricate the proposed rectifier circuit using a GaAs Schottky barrier diode. The simulation and measurement results show that the single-shunt rectifier circuit's proposed structure is capable of rectification and impedance matching. The fabricated rectifier circuit's RF-DC conversion efficiency reaches a maximum of 91.0%. This RF-DC conversion efficiency is a world record for 920-MHz band rectifier circuits.
ER -
English
