We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD.

We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si3N4 substrates is higher (460-470) than that of the case of normal Si substrates (440). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the guided growth over metal structures is also shown to be possible. Selective growth of SiNWs on pre-patterned surfaces opens up the possibility of self-aligning SiNWs for the integration of complex device structures.