Selective Growth of Self-Assembling Si and SiGe Quantum Dots
Summary :
We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.5 pp.393-396
- Publication Date
- 2014/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.393
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Katsunori MAKIHARA
Nagoya University
Mitsuhisa IKEDA
Hiroshima University
Seiichi MIYAZAKI
Nagoya University
Keyword
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Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, "Selective Growth of Self-Assembling Si and SiGe Quantum Dots" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 5, pp. 393-396, May 2014, doi: 10.1587/transele.E97.C.393.
Abstract: We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.393/_p
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@ARTICLE{e97-c_5_393,
author={Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Selective Growth of Self-Assembling Si and SiGe Quantum Dots},
year={2014},
volume={E97-C},
number={5},
pages={393-396},
abstract={We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD.},
keywords={},
doi={10.1587/transele.E97.C.393},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Selective Growth of Self-Assembling Si and SiGe Quantum Dots
T2 - IEICE TRANSACTIONS on Electronics
SP - 393
EP - 396
AU - Katsunori MAKIHARA
AU - Mitsuhisa IKEDA
AU - Seiichi MIYAZAKI
PY - 2014
DO - 10.1587/transele.E97.C.393
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2014
AB - We have succeeded in highly selective growth and positioning of Si- and SiGe-quantum-dots (QDs) on SiO2 patterns by controlling the reactive area, whose surface is terminated with OH bonds for Si nucleation in low-pressure chemical vapor deposition (LPCVD). The selective growth of QDs on thermally grown SiO2 line-patterns was demonstrated in LPCVD of SiH4 and GeH4 just after Si nucleation by controlling the early stages of Si2H6-LPCVD, which indicates effectively enhanced initial nucleation on OH-terminated SiO2 surface and suppression of the nucleation and growth of dots on as-grown SiO2 surface during Si2H6-LPCVD prior to SiH4-LPCVD.
ER -
English
