In this paper, a general theory on multiple-valued static random-access-memory (RAM) is investigated. A criterion for a stable and an unstable modes is proved with a strict mathematical method and expressed with a diagrammatic representation. Based on the theory, an NMOS 6-transistor ternary and a quaternary static RAM (SRAM) cells are proposed and simulated with PSPICE. The detail circuit design and realization are analyzed. A 10-valued CMOS current-mode static RAM cell is also presented and fabricated with standard 5-µm CMOS technology. A family of multiple-valued flip-flops is presented and they show to have desirable properties for use in multiple-valued sequential circuits. Both PSPICE simulations and experiments indicate that the general theory presented are very useful and effective tools in the optimum design and circuit realization of multiple-valued static RAMs and flip-flops.