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Yoshinori ODA Yasuyuki OHKURA Kaina SUZUKI Sanae ITO Hirotaka AMAKAWA Kenji NISHI
A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.