Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method
Summary :
A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.416-420
- Publication Date
- 2003/03/01
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- Online ISSN
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- Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
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Yoshinori ODA, Yasuyuki OHKURA, Kaina SUZUKI, Sanae ITO, Hirotaka AMAKAWA, Kenji NISHI, "Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 3, pp. 416-420, March 2003, doi: .
Abstract: A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_3_416/_p
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@ARTICLE{e86-c_3_416,
author={Yoshinori ODA, Yasuyuki OHKURA, Kaina SUZUKI, Sanae ITO, Hirotaka AMAKAWA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method},
year={2003},
volume={E86-C},
number={3},
pages={416-420},
abstract={A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 416
EP - 420
AU - Yoshinori ODA
AU - Yasuyuki OHKURA
AU - Kaina SUZUKI
AU - Sanae ITO
AU - Hirotaka AMAKAWA
AU - Kenji NISHI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.
ER -
English
