In this paper, a highly linear and low noise CMOS active RF tracking filter for a digital TV tuner is presented. The Gm cell of the Gm-C filter is based on a dynamic source degenerated differential pair with an optimized transistor size ratio, thereby providing good linearity and high-frequency operation. The proposed RF tracking filter architecture includes two complementary parallel paths, which provide harmonic rejection in the low band and unwanted signal rejection in the high band. The fabricated tracking filter based on a 0.13 µm CMOS process shows a 48860 MHz tracking range with 30–32 dB 3rd order harmonic rejection, a minimum input referred noise density of 2.4 nV/, and a maximum IIP3 of 0 dBm at 3 dB gain while drawing 39 mA from a 1.2-V supply. The total chip area is 1 mm0.9 mm.

Analog-centric RFCMOS technology has played an important role in motivating the change of technology from conventional discrete device technology or bipolar IC technology to CMOS technology. However it introduces many problems such as poor performance, susceptibility to PVT fluctuation, and cost increase with technology scaling. The most important advantage of CMOS technology compared with legacy RF technology is that CMOS can use more high performance digital circuits for very low cost. In fact, analog-centric RF-CMOS technology has failed the FM/AM tuner business and the digital-centric CMOS technology is becoming attractive for many users. It has many advantages; such as high performance, no external calibration points, high yield, and low cost. From the above facts, digital-centric CMOS technology which utilizes the advantages of digital technology must be the right path for future RF technology. Further investment in this technology is necessary for the advancement of RF technology.

RF Variable Gain Amplifiers (RF-VGA) are important components for integrated TV broadcast receivers. Analog and digital controlled RF-VGAs are compared in terms of linearity and an AGC loop architecture suitable for digitally controlled RF-VGA is proposed. Further linearity enhancement applicable for CMOS implementation is also discussed.

A Superconductor-Insulator-Superconductor (SIS) mixer using two junctions connected in parallel through a stripline inductance has been studied. The essential point of the two-junctions device is that the capacitance of the junctions was tuned out by the inductance to obtain a broadband operation without mechanical tuning elements. It has been shown by theoretical analysis that the performance of this type of device is excellent and nearly quantum-limited performance of the mixer can be obtained. It has been demonstrated that the double sideband (DSB) noise temperature of a receiver employing this type of device was less than 40 K over the bandwidth of 90-120 GHz and that the lowest receiver noise temperature of 18 K, which is only 3.2 times as large as the quantum limited photon noise was obtained around 118 GHz. Junctions used in the two-junctions device have significantly larger area, i.e. larger capacitance, and smaller normal resistance than conventional ones. In order to obtain a good impedance match between the source and the junctions, an impedance transformer made of a superconductiong stripline was integrated with the junctions. This type of two-junctions device can easily be scaled to submillimeter frequency without using submicron-sized SIS junctions.