An automatic transistor-level performance fault tracing method is proposed which is applicable to the case where only CAD layout data is available in the CAD-linked electron beam test system. The technique uses an integrated algorithm that combines a previously proposed transistor-level fault tracing algorithm and a successive circuit extraction from CAD layout data. An expansion of the algorithm to the fault tracing in a combined focused ion beam and electron beam test system which enables us to measure signals on the interconnections in the lower layers is also described. An application of the technique to a CMOS model layout with about 100 transistors shows its validity.

Precise matching of the SEM (secondary electron microscope) image of the DUT (device under test) interconnection pattern with the CAD layout is required in the CAD-linked electron beam test system. We propose the point pattern matching method that utilizes a corner pattern in the CAD layout. In the method, a corner pattern which consists of a small number of pixels is derived by taking into account the design rules of VLSIs. By using the corner pattern as a template, the matching points of the template are sought in both the SEM image and CAD layout. Then, the point image obtained from the SEM image of DUT is matched with that from the CAD layout. Even if the number of points obtained in the DUT pattern is different from that in the CAD layout due to the influence of noise present in the SEM image of the DUT pattern, the point matching method would be successful. The method is applied to nonpassivated and passivated LSIs. Even for the passivated LSI where the contrast in the SEM image is mainly determined by voltage contrast, matching is successful. The computing time of the proposed method is found to be shortened by a factor of 4 to 10 compared with that in a conventional correlation coefficient method.

A method to improve the efficiency of dynamic fault imaging (DFI) by fully utilizing the CAD data in the CAD-linked electron beam test system is proposed. In the method, in order to shorten the long acquisition time of the stroboscopic voltage contrast images over the whole area of the chip during the entire test cycle, only the area and phase (time) required for fault tracing are selected by utilizing the CAD data. Furthermore, image processing techniques are combined with the method to improve the efficiency of the DFI. In particular, the signal averaging technique is used in order to improve the signal-to-noise ratio in the stroboscopic images where all voltage information data on the equipotential electrode recognized by the CAD layout data are averaged. This enables us to reduce the acquisition time of images. Moreover, the experimental system is set up so that the image processing can be performed in parallel with the acquisition of the stroboscopic images. The proposed method is applied to part of a 2k-transistor block of a nonpassivated CMOS LSI where a marginal fault is detected. The result shows that the method is an efficient approach to the fully automatic fault diagnosis in the CAD-linked electron beam test system. The proposed method could improve the efficiency of the conventional DFI by a factor of more than 1000.