The authors propose a single-layer hollow-waveguide 8-way Butler matrix. All components of the Butler matrix are in a single layer which contributes to low-cost fabrication. To reduce the length of the couplers, a step structure is installed in the coupled region. 50% length reduction is obtained in comparison with the conventional design using reflection-suppressing posts in the coupled region. The total size of the matrix is 17.1λg6.0λg. The full structure of the matrix is fabricated by hollow waveguides at 22 GHz band and the total measured loss is only 0.25 dB.

Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.