The share of leakage in cache power consumption increases with technology scaling. Choosing a higher threshold voltage (Vth) and/or gate-oxide thickness (Tox) for cache transistors improves leakage, but impacts cell delay. We show that due to uncorrelated random within-die delay variation, only some (not all) of cells actually violate the cache delay after the above change. We propose to add a spare cache way to replace delay-violating cache-lines separately in each cache-set. By SPICE and gate-level simulations in a commercial 90 nm process, we show that choosing higher Vth, Tox and adding one spare way to a 4-way 16 KB cache reduces leakage power by 42%, which depending on the share of leakage in total cache power, gives up to 22.59% and 41.37% reduction of total energy respectively in L1 instruction- and L2 unified-cache with a negligible delay penalty, but without sacrificing cache capacity or timing-yield.

Random variations in Id-Vg characteristics of MOS transistors in an LSI chip are shown to be concisely characterized by using only 3 transistor parameters (Vth, β0, vSAT) in the MOS level 3 SPICE model. Statistical analyses of the transistor parameters show that not only the threshold voltage variation, ΔVth, but also the current factor variation, Δβ0, independently induces Id-variation, and that Δβ0 is negatively correlated with the saturation velocity variation, ΔvSAT. Using these results, we have proposed a simple method that effectively takes the correlation between parameters into consideration when creating statistical model parameters for designing a circuit. Furthermore, we have proposed a sensitivity analysis methodology for estimating the process window of SRAM cell operation taking transistor variability into account. By applying the concise statistical model parameters to the sensitivity analysis, we are able to obtain valid process windows without the large volume of data-processing and long turnaround time associated with the Monte Carlo simulation. The process window was limited not only by ΔVth, but also by Δβ0 which enhanced the failure region in the process window by 20%.

In this paper, we show that speed and yield of reconfigurable devices can be enhanced by utilizing within-die (WID) delay variations. An LUT Array LSI is fabricated to confirm whether FPGAs have clear WID variations to be utilized. We can measure delay variations by counting the number of LUTs a signal propagates within a certain time. Clear die-to-die (D2D) and WID variations are observed. We propose a variation model from the measurement results. Adequacy of the model is discussed from randomness of the random component. Effect of the speed and yield enhancement is confirmed using the proposed model. Yield increases from 80.0% to 100.0% by optimizing configurations.