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Kanji YASUI Yutaka OOSHIMA Yuichiro KUROKI Hiroshi NISHIYAMA Masasuke TAKATA Tadashi AKAHANE
Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-21020 cm-3 without decrease in the Hall mobility.
Qing YANG Miyoko TANAKA Takahito YASUDA Hirokazu TATSUOKA
A variety of ZnO belt-like structures were synthesized by the heat treatment of ZnS substrates with Ga droplets in the air, and their morphological and structural properties were investigated. Three types of ZnO belts with flat surfaces of (2
Hiroyuki IECHI Yasuyuki WATANABE Hiroshi YAMAUCHI Kazuhiro KUDO
We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.