Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode
Summary :
Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-2
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.12 pp.1438-1442
- Publication Date
- 2009/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.1438
- Type of Manuscript
- Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
- Category
- Nanomaterials and Nanostructures
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Kanji YASUI, Yutaka OOSHIMA, Yuichiro KUROKI, Hiroshi NISHIYAMA, Masasuke TAKATA, Tadashi AKAHANE, "Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1438-1442, December 2009, doi: 10.1587/transele.E92.C.1438.
Abstract: Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1438/_p
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@ARTICLE{e92-c_12_1438,
author={Kanji YASUI, Yutaka OOSHIMA, Yuichiro KUROKI, Hiroshi NISHIYAMA, Masasuke TAKATA, Tadashi AKAHANE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode},
year={2009},
volume={E92-C},
number={12},
pages={1438-1442},
abstract={Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-2
keywords={},
doi={10.1587/transele.E92.C.1438},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode
T2 - IEICE TRANSACTIONS on Electronics
SP - 1438
EP - 1442
AU - Kanji YASUI
AU - Yutaka OOSHIMA
AU - Yuichiro KUROKI
AU - Hiroshi NISHIYAMA
AU - Masasuke TAKATA
AU - Tadashi AKAHANE
PY - 2009
DO - 10.1587/transele.E92.C.1438
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Al doped zinc oxide (AZO) films were deposited using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. Improvement of crystalline uniformity was achieved by the use of an appropriate negative grid bias to effectively suppress the bombardment of high-energy charged particles onto the film surface. The uniformity of the film's electronic properties, such as resistivity, carrier concentration and Hall mobility, was also improved using the sputtering method. Hydrogen plasma annealing was investigated to further decrease the resistivity of the ZnO films and the carrier concentration was increased by 1-2
ER -
English
