IEICE TRANSACTIONS on Electronics
Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition
Summary :
The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 µm/h (no-electric field) to 23 µm/h at the positive electrode side and reduced to 2.8 µm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.662-666
- Publication Date
- 2005/04/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.4.662
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
- Category
- Thin Film Transistors
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Gou NAKAGAWA, Noritoshi SHIBATA, Tanemasa ASANO, "Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 4, pp. 662-666, April 2005, doi: 10.1093/ietele/e88-c.4.662.
Abstract: The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 µm/h (no-electric field) to 23 µm/h at the positive electrode side and reduced to 2.8 µm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.4.662/_p
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@ARTICLE{e88-c_4_662,
author={Gou NAKAGAWA, Noritoshi SHIBATA, Tanemasa ASANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition},
year={2005},
volume={E88-C},
number={4},
pages={662-666},
abstract={The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 µm/h (no-electric field) to 23 µm/h at the positive electrode side and reduced to 2.8 µm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.},
keywords={},
doi={10.1093/ietele/e88-c.4.662},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition
T2 - IEICE TRANSACTIONS on Electronics
SP - 662
EP - 666
AU - Gou NAKAGAWA
AU - Noritoshi SHIBATA
AU - Tanemasa ASANO
PY - 2005
DO - 10.1093/ietele/e88-c.4.662
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2005
AB - The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 µm/h (no-electric field) to 23 µm/h at the positive electrode side and reduced to 2.8 µm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.
ER -
English
