Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates

Jang Yeon KWON; Do Young KIM; Hans S. CHO; Kyung Bae PARK; Ji Sim JUNG; Jong Man KIM; Young Soo PARK; Takashi NOGUCHI

doi:10.1093/ietele/e88-c.4.667

IEICE TRANSACTIONS on Electronics

Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates

Jang Yeon KWON, Do Young KIM, Hans S. CHO, Kyung Bae PARK, Ji Sim JUNG, Jong Man KIM, Young Soo PARK, Takashi NOGUCHI

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Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm²/Vsec.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.667-671

Publication Date: 2005/04/01

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DOI: 10.1093/ietele/e88-c.4.667

Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)

Category: Thin Film Transistors

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Jang Yeon KWON, Do Young KIM, Hans S. CHO, Kyung Bae PARK, Ji Sim JUNG, Jong Man KIM, Young Soo PARK, Takashi NOGUCHI, "Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 4, pp. 667-671, April 2005, doi: 10.1093/ietele/e88-c.4.667.
Abstract: Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm²/Vsec.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.4.667/_p

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@ARTICLE{e88-c_4_667,
author={Jang Yeon KWON, Do Young KIM, Hans S. CHO, Kyung Bae PARK, Ji Sim JUNG, Jong Man KIM, Young Soo PARK, Takashi NOGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates},
year={2005},
volume={E88-C},
number={4},
pages={667-671},
abstract={Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm²/Vsec.},
keywords={},
doi={10.1093/ietele/e88-c.4.667},
ISSN={},
month={April},}

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TY - JOUR
TI - Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 667
EP - 671
AU - Jang Yeon KWON
AU - Do Young KIM
AU - Hans S. CHO
AU - Kyung Bae PARK
AU - Ji Sim JUNG
AU - Jong Man KIM
AU - Young Soo PARK
AU - Takashi NOGUCHI
PY - 2005
DO - 10.1093/ietele/e88-c.4.667
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2005
AB - Poly-Si TFT (Thin Film transistor) fabricated below 170 using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm²/Vsec.
ER -

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Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates

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