IEICE TRANSACTIONS on Electronics
Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns
Summary :
A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced resistance change method. The outer dummy protects via chain pattern from local flare and optical proximity effects. Using this test structure, we can identify the failure point in the 1.2 k and 15 k via chain fabricated by Cu/low-k single damascene process. This test structure is beneficial in the application to the 65 nm-node technologies and beyond.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.796-803
- Publication Date
- 2005/05/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.5.796
- Type of Manuscript
- Special Section PAPER (Special Section on Microelectronic Test Structures)
- Category
Authors
Takashi NASUNO
Yoshihisa MATSUBARA
Hiromasa KOBAYASHI
Akiyuki MINAMI
Eiichi SODA
Hiroshi TSUDA
Koichiro TSUJITA
Wataru WAKAMIYA
Nobuyoshi KOBAYASHI
Keyword
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Takashi NASUNO, Yoshihisa MATSUBARA, Hiromasa KOBAYASHI, Akiyuki MINAMI, Eiichi SODA, Hiroshi TSUDA, Koichiro TSUJITA, Wataru WAKAMIYA, Nobuyoshi KOBAYASHI, "Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 5, pp. 796-803, May 2005, doi: 10.1093/ietele/e88-c.5.796.
Abstract: A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced resistance change method. The outer dummy protects via chain pattern from local flare and optical proximity effects. Using this test structure, we can identify the failure point in the 1.2 k and 15 k via chain fabricated by Cu/low-k single damascene process. This test structure is beneficial in the application to the 65 nm-node technologies and beyond.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.796/_p
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@ARTICLE{e88-c_5_796,
author={Takashi NASUNO, Yoshihisa MATSUBARA, Hiromasa KOBAYASHI, Akiyuki MINAMI, Eiichi SODA, Hiroshi TSUDA, Koichiro TSUJITA, Wataru WAKAMIYA, Nobuyoshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns},
year={2005},
volume={E88-C},
number={5},
pages={796-803},
abstract={A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced resistance change method. The outer dummy protects via chain pattern from local flare and optical proximity effects. Using this test structure, we can identify the failure point in the 1.2 k and 15 k via chain fabricated by Cu/low-k single damascene process. This test structure is beneficial in the application to the 65 nm-node technologies and beyond.},
keywords={},
doi={10.1093/ietele/e88-c.5.796},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 803
AU - Takashi NASUNO
AU - Yoshihisa MATSUBARA
AU - Hiromasa KOBAYASHI
AU - Akiyuki MINAMI
AU - Eiichi SODA
AU - Hiroshi TSUDA
AU - Koichiro TSUJITA
AU - Wataru WAKAMIYA
AU - Nobuyoshi KOBAYASHI
PY - 2005
DO - 10.1093/ietele/e88-c.5.796
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced resistance change method. The outer dummy protects via chain pattern from local flare and optical proximity effects. Using this test structure, we can identify the failure point in the 1.2 k and 15 k via chain fabricated by Cu/low-k single damascene process. This test structure is beneficial in the application to the 65 nm-node technologies and beyond.
ER -
English
