IEICE TRANSACTIONS on Electronics
Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Summary :
The correlation between ohmic contact resistivity (ρc) and transconductance (gm) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize ρc precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transconductance (gm0), which is not influenced by the source resistance, can be estimated. The gm0 thus obtained is between 179 and 206 mS/mm. Then, it became possible to calculate the correlation between gm and (ρc. We found that ρc should be below 10-5 Ωcm2 for the improvement of gm in AlGaN/GaN HEMT when Rsh
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.1064-1067
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.1064
- Type of Manuscript
- Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- GaN-Based Devices
Authors
Yoshikazu HIROSE
Akira HONSHIO
Takeshi KAWASHIMA
Motoaki IWAYA
Satoshi KAMIYAMA
Michinobu TSUDA
Hiroshi AMANO
Isamu AKASAKI
Keyword
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Yoshikazu HIROSE, Akira HONSHIO, Takeshi KAWASHIMA, Motoaki IWAYA, Satoshi KAMIYAMA, Michinobu TSUDA, Hiroshi AMANO, Isamu AKASAKI, "Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 1064-1067, July 2006, doi: 10.1093/ietele/e89-c.7.1064.
Abstract: The correlation between ohmic contact resistivity (ρc) and transconductance (gm) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize ρc precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transconductance (gm0), which is not influenced by the source resistance, can be estimated. The gm0 thus obtained is between 179 and 206 mS/mm. Then, it became possible to calculate the correlation between gm and (ρc. We found that ρc should be below 10-5 Ωcm2 for the improvement of gm in AlGaN/GaN HEMT when Rsh
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.1064/_p
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@ARTICLE{e89-c_7_1064,
author={Yoshikazu HIROSE, Akira HONSHIO, Takeshi KAWASHIMA, Motoaki IWAYA, Satoshi KAMIYAMA, Michinobu TSUDA, Hiroshi AMANO, Isamu AKASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT},
year={2006},
volume={E89-C},
number={7},
pages={1064-1067},
abstract={The correlation between ohmic contact resistivity (ρc) and transconductance (gm) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize ρc precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transconductance (gm0), which is not influenced by the source resistance, can be estimated. The gm0 thus obtained is between 179 and 206 mS/mm. Then, it became possible to calculate the correlation between gm and (ρc. We found that ρc should be below 10-5 Ωcm2 for the improvement of gm in AlGaN/GaN HEMT when Rsh
keywords={},
doi={10.1093/ietele/e89-c.7.1064},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
T2 - IEICE TRANSACTIONS on Electronics
SP - 1064
EP - 1067
AU - Yoshikazu HIROSE
AU - Akira HONSHIO
AU - Takeshi KAWASHIMA
AU - Motoaki IWAYA
AU - Satoshi KAMIYAMA
AU - Michinobu TSUDA
AU - Hiroshi AMANO
AU - Isamu AKASAKI
PY - 2006
DO - 10.1093/ietele/e89-c.7.1064
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - The correlation between ohmic contact resistivity (ρc) and transconductance (gm) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize ρc precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transconductance (gm0), which is not influenced by the source resistance, can be estimated. The gm0 thus obtained is between 179 and 206 mS/mm. Then, it became possible to calculate the correlation between gm and (ρc. We found that ρc should be below 10-5 Ωcm2 for the improvement of gm in AlGaN/GaN HEMT when Rsh
ER -
English
