IEICE TRANSACTIONS on Electronics
Multilevel Storage in Phase-Change Memory
Summary :
A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.3 pp.634-640
- Publication Date
- 2007/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.3.634
- Type of Manuscript
- PAPER
- Category
- Storage Technology
Authors
Keyword
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Yang HONG, Yinyin LIN, Ting-Ao TANG, Bomy CHEN, "Multilevel Storage in Phase-Change Memory" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 3, pp. 634-640, March 2007, doi: 10.1093/ietele/e90-c.3.634.
Abstract: A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.3.634/_p
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@ARTICLE{e90-c_3_634,
author={Yang HONG, Yinyin LIN, Ting-Ao TANG, Bomy CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Multilevel Storage in Phase-Change Memory},
year={2007},
volume={E90-C},
number={3},
pages={634-640},
abstract={A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.},
keywords={},
doi={10.1093/ietele/e90-c.3.634},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - Multilevel Storage in Phase-Change Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 634
EP - 640
AU - Yang HONG
AU - Yinyin LIN
AU - Ting-Ao TANG
AU - Bomy CHEN
PY - 2007
DO - 10.1093/ietele/e90-c.3.634
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2007
AB - A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.
ER -
English
